Symbols  of  parameters of semi-conductor diodes   

 

     Designation                    Parameter
U>1/U8 as much as possible allowable constant (U>1) or pulse (U8
I?@/I8 as much as possible allowable constant (I?@) or pulse (I8
U?@/I?@ the maximal power failure (U?@) on the diode at the set direct current (I?@) through it.
C4/U4 capacity of the diode (C4) and a voltage on the diode (U4) at which it is measured.
Io (25)/Io< return current of the diode at a limiting return voltage. It is resulted for temperature +25 (I> (25)) and the maximal working temperature (I><).
F<0E the maximal working frequency of the diode.
T2>A/Q?: (I?/U>) time of restoration ("2>A) of return resistance of the diode or charge (Q?:) for its switching at the set direct current (I?) and a return voltage (U>).
UAB/IAB Voltage of stabilization (UAB) a stabilitron at the set direct current (IAB) through it.
IA1/IA2 the minimal and maximal currents of stabilization.
RAB/IAB dynamic resistance (RAB) a stabilitron at the set direct current (IAB) through it.
P/PB as much as possible allowable constant disseminate capacity on the diode (P) and on the diode with a heat-conducting path (PB).
"U temperature factor of change of a voltage of stabilization of a stabilitron.
dUAB disorder of rated voltage of stabilization (the maximal percentage deviation or in voltages is resulted).
C2/U>1 capacity varicap (C2) and a voltage on it (U>1) at which it is measured. The minimal and maximal values are resulted.
Kc (U1-U2) factor of overlapping on capacity varicap (the attitude of the maximal and minimal capacity measured at two voltage).
Q (U/F) good quality varicap. It is measured on the certain frequency (F) and at the certain voltage on 20@8:0?5 (U) or at it set capacity.
Io/U> return current varicap (I>) at the certain return voltage (U>).
      
   
(*) - for a pulse mode.
     "" Typical value.



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